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SMBJ5.0A thru SMBJ188A
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Vishay General Semiconductor
THERMAL CHARACTERISTICS (T A = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient (1)
Typical thermal resistance, junction to lead
SYMBOL
R ? JA
R ? JL
VALUE
100
20
UNIT
°C/ W
Note
(1) Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
SMBJ5.0A-E3/52
SMBJ5.0A-E3/5B
SMBJ5.0AHE3/52 (1)
SMBJ5.0AHE3/5B (1)
UNIT WEIGHT (g)
0.096
0.096
0.096
0.096
PREFERRED PACKAGE CODE
52
5B
52
5B
BASE QUANTITY
750
3200
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T A = 25 °C unless otherwise noted)
100
150
t r = 10 μs
T J = 25 °C
P u lse W idth (t d )
is defined as the Point
10
100
Peak Val u e
I PPM
w here the Peak C u rrent
decays to 50 % of I PPM
Half Val u e - I PP
I PPM
2
1
0.1
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
50
0
t d
10/1000 μs W a v eform
as defined by R.E.A.
0.1 μs
1.0 μs
10 μs
100 μs
1.0 ms
10 ms
0
1.0
2.0
3.0
4.0
100
75
50
t d - P u lse W idth (s)
Fig. 1 - Peak Pulse Power Rating Curve
6000
1000
t - Time (ms)
Fig. 3 - Pulse Waveform
Meas u red at
Zero Bias
25
100
V R , Meas u red at Stand-Off
Voltage V W M
Uni-Directional
Bi-Directional
T J = 25 °C
f = 1.0 MHz
V sig = 50 mV P-P
0
10
0
25
50
75
100
125
150
175
200
1
10
100
200
T J - Initial Temperat u re (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
V W M - Re v erse Stand-Off Voltage (V)
Fig. 4 - Typical Junction Capacitance
Revision: 26-Jul-12
3
Document Number: 88392
For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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